Maeda S | Advanced Device Development Dept. Renesas Technology Corp.
スポンサーリンク
概要
Advanced Device Development Dept. Renesas Technology Corp. | 論文
- Direct Measurement of Transient Drain Currents in Partially-Depleted SOI N-Channel MOSFETs Using a Nuclear Microprobe for Highly Reliable Device Designs
- Analysis of the Delay Distributions of 0.5μm SOI LSIs (Special Issue on SOI Devices and Their Process Technologies)
- Comparison of Standard and Low-Dose Separation-by-Implanted-Oxygen Substrates for 0.15 μm SOI MOSFET Applications
- High-Speed SOI 1/8 Frequency Divider Using Field-Shield Body-Fixed Structure
- Comparison of Standard and Low-Dose SIMOX Substrates for 0.15μm SOI MOSFET Applications