TAKAHASHI Chiharu | NTT Telecommunications Energy Laboratories
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概要
関連著者
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TAKAHASHI Chiharu
NTT Telecommunications Energy Laboratories
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Tsuchizawa Tai
Ntt Telecommunications Energy Laboratories
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ODA Masatoshi
NTT Telecommunications Energy Laboratories
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Tsuchizawa Tai
Ntt Microsystem Integration Labs.
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Tsuchizawa T
Ntt Telecommunications Energy Lab. Kanagawa Jpn
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IRIGUCHI Hiroki
NTT Advanced Technology Crporation
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SHIMADA Masaru
NTT Telecommunications Energy Laboratories
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UCHIYAMA Shingo
NTT Telecommunications Energy Laboratories
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Takahashi C
Ntt Telecommunications Energy Laboratories
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Tsuchizawa T
Microsystem Integration Laboratories Ntt Corporation
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Iriguchi Hiroki
NTT Advanced Technology Corporation, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
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UCHIYAMA Shingo
NTT System Electronics Laboratories
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Shimada M
Ntt Microsystem Integration Lab. Kanagawa Jpn
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Shimada M
Hiroshima Univ. Higashi‐hiroshima
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NISHIMURA Hiroshi
NTT Telecommunications Energy Laboratories
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ONO Toshiro
NTT Telecommunications Energy Laboratories
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Uchiyama S
Canon Inc. Utsunomiya Jpn
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Uchiyama Susumu
Department Of Electronics Nagoya University
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Ohkubo Tadakatsu
Faculty Of Engineering Nagaoka University Of Technology
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Nishimura Kazumi
Ntt Telecommunications Energy Laboratories
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Jin Yoshito
Ntt Telecommunications Energy Laboratories
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Shimada M
Graduate School Of Natural Science And Technology Kanazawa University
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Matsuo Seitaro
Ntt Telecommunications Energy Laboratories
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Takahashi Chiharu
NTT Telecommunications Energy Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
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Uchiyama Shingo
NTT Telecommunications Energy Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
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Oda Masatoshi
NTT Telecommunications Energy Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
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Tsuchizawa Tai
NTT Telecommunications Energy Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
著作論文
- Electron Cyclotron Resonance Plasma Etching of α-Ta for X-Ray Mask Absorber Using Chlorine and Fluoride Gas Mixture
- Etching Characteristics of α-Type Ta Film Using Cl_2 Electron Cyclotron Resonance(ECR)Plasma
- Anisotropic Etching of Si and WSiN Using ECR Plasma of SF_6-CF_4 Gas Mixture
- Electron Cyclotron Resonance Plasma Etching of $\alpha$-Ta for X-Ray Mask Absorber Using Chlorine and Fluoride Gas Mixture