OHMI Kazuyuki | Department of Electronic Engineering, Faculty of Engineering, Tohoku University

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概要

• 同名の論文著者
• Department of Electronic Engineering, Faculty of Engineering, Tohoku Universityの論文著者

関連著者

• Ohmi Tadahiro

  Department Of Electronic Engineering Graduate School Of Engineering Tohoku University

• OHMI Kazuyuki

  Department of Electronic Engineering, Faculty of Engineering, Tohoku University

• Ohmi Tadahiro

  Department Of Electronic Engineering

• Ohmi Kazuyuki

  Department Of Electronic Engineering Faculty Of Engineering Tohoku University

• Yamamoto Kazuma

  Department Of Electronic Engineering Faculty Of Engineering Tohoku University:laboratory For Microel

• NAKAMURA Kou

  Department of Electronic Engineering, Faculty of Engineering, Tohoku University

• MAKIHARA Koji

  Department of Electronic Engineering, Faculty of Engineering, Tohoku University

• Ohmi T

  Tohoku Univ. Sendai Jpn

• Ohmi K

  Device Development Center Canon Inc.

• Makihara K

  Department Of Electronics Tohoku University

• Makihara Koji

  Department Of Applied Chemistry Graduate School Of Engineering Kyushu University

• IWAMOTO Toshiyuki

  Department of Polymer Science and Engineering, Faculty of Textile Science, Kyoto Institute of Techno

• Yabune Tatuhiro

  Department of Electronic Engineering, Faculty of Engineering, Tohoku University,

• Miyake Toshiki

  Department of Electronic Engineering, Faculty of Engineering, Tohoku University,

• Miyake Toshiki

  Department Of Electronic Engineering Faculty Of Engineering Tohoku University

• Iwamoto Toshiyuki

  Department Of Electronics Faculty Of Engineering Tohoku University

• Yabune Tatuhiro

  Department Of Electronic Engineering Faculty Of Engineering Tohoku University

• Iwamoto Toshiyuki

  Department Of Electronic Engineering Faculty Of Engineering Tohoku University

• Yamamoto Kazuma

  Department of Electrical Engineering and Computer Science, Nagoya University

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著作論文

• Silicon Wafer Orientation Dependence of Metal Oxide Sermiconductor Device Reliability
• Formation Process of Highly Reliable Ultra-Thin Gate Oxide

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