Cho S‐m | Lg Electronics Inst. Technol. Seoul Kor
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概要
Lg Electronics Inst. Technol. Seoul Kor | 論文
- Preparation of BaTiO_3 Thin Films by Metalorganic Chemical Vapor Deposition Using Ultrasonic Spraying ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Aluminum Chemical Vapor Deposition Technology for High Deposition Rate and Surface Morphology Improvement
- Crystallographic Structures and Parasitic Resistances of Self-Aligned Silicide TiSi_2/Self-Aligned Nitrided Barrier Layer/Selective Chemical Vapor Deposited Aluminum in Fully Self-Aligned Metallization Metal Oxide Semiconductor Field-Effect Transistor
- Self-Aligned 10-nm Barrier Layer Formation Technology for Fully Self-Aligned Metallization Metal-Oxide-Semiconductor Field-Effect-Transistor
- Self-Aligned 10-nm Barrier Layer Formation Technology for Fully Self-Aligned Metallization MOSFET