Usui Tomohiro | Graduate School of Science and Technology, Hirosaki University, Hirosaki, Aomori 036-8561, Japan
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Graduate School of Science and Technology, Hirosaki University, Hirosaki, Aomori 036-8561, Japan | 論文
- Effects of Silicon Source Gas and Substrate Bias on the Film Properties of Si-Incorporated Diamond-Like Carbon by Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition
- Epitaxial Growth of GaN Films by Pulse-Mode Hot-Mesh Chemical Vapor Deposition
- Hydrogen Effects on the Properties of Silicon/Nitrogen-Coincorporated Diamond-Like Carbon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition
- Characteristics of Silicon/Nitrogen-Incorporated Diamond-Like Carbon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition
- Void and Nanostructure Formations during Thermal Decomposition of 20-nm-Thick Silicon Oxide Layer on Si(100)