Cho Ji-Ho | Gwangju Institute of Science and Technology
スポンサーリンク
概要
Gwangju Institute of Science and Technology | 論文
- Stress voltage polarity dependent threshold voltage shift behavior of ultrathin Hafnium oxide gated pMOSFET with TiN electrode
- The origin of slow and fast trapping under Bias Temperature Instability in HfSiO MOSFET
- Ultrashallow Junction Formation Using Novel Plasma Doping Technology beyond 50nm MOS Devices
- Ultra-Shallow p+/n Junction Prepared by Low Energy BF_3 Plasma Doping(PLAD) and KrF Excimer Laser Annealing
- Ultrashallow Junction Formation Using Novel Plasma Doping Technology beyond 50 nm MOS Devices