Chung U-In | Process Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co. Ltd.
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- Process Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co. Ltd.の論文著者
Process Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co. Ltd. | 論文
- Improvement of Contact Resistance between Ru Electrode and TiN Barrier in Ru/Crystalline-Ta_2O_5/Ru Capacitor for 50nm Dynamic Random Access Memory
- Improvement of Contact Resistance of Ru electrode/TiN barrier at Ru/Crystalline-Ta_2O_5/Ru Capacitor for 50nm DRAM device
- Ru/TiO_2/ZrO_2/TiN (RIT-TiO_2/ZrO_2) Capacitor Structure for the 50nm DRAM Device and beyond
- Investigation of Ru/TiN Bottom Electrodes Prepared by Chemical Vapor Deposition
- Performance and Reliability of MIM (Metal-Insulator-Metal) Capacitors with ZrO_2 for 50nm DRAM Application