石川 英明 | 〒257-000神奈川県秦野市鶴巻北2-8-1-001
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概要
論文 | ランダム
- Studies of AlGaN/GaN HEMTs on 4-inch Silicon substrate(Session A6 Compound Semiconductor Devices III)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Effects of device passivation on AlGaN/GaN HEMTs using electron beam evaporated SiO2 and Si3N4 (Devices:先端デバイスの基礎と応用に関するアジアワークショップ)
- Studies of electron beam evaporated SiO_2/AlGaN/GaN-metal-oxide-semiconductor HEMTs on sapphire substrate
- Studies of electron beam evaporated SiO_2/AlGaN/GaN-metal-oxide-semiconductor HEMTs on sapphire substrate
- Studies of AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Silicon Carbide and Sapphire Substrates