Tsunashima Satoshi | NTT Photonics Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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概要
NTT Photonics Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan | 論文
- Metamorphic Resonant Tunneling Diodes and Its Application to Chaos Generator ICs
- Experimental Demonstration of Ideal Noise Shaping in Resonant Tunneling Delta–Sigma Modulator for High Resolution, Wide Band Analog-to-Digital Converters
- High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal–Organic Vapor-Phase Epitaxy
- Effect of Epitaxial Layer Crystal Quality on DC and RF Characteristics of AlGaN/GaN Short-Gate High-Electron-Mobility Transistors on Sapphire Substrates
- Experimental Consideration of Optical Band-Gap Energy of Wurtzite InN