Shimoda Tatsuya | Seiko Epson Corporation, Technology Platform Research Center
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概要
Seiko Epson Corporation, Technology Platform Research Center | 論文
- High-Quality Gate-SiO_x and SiO_x/Si Interface Formation at Low Temperature Using Plasma-Enhanced Chemical Vapor Deposition
- High-Quality SiO_2/Si Interface Formation and Its Application to Fabrication of Low-Temperature-Processed Polycrystalline Si Thin-Film Transistor(Semiconductors)
- Capping Layer on Thin Si Film for $\mu$-Czochralski Process with Excimer Laser Crystallization
- Overdense Plasma Production Using Electron Cyclotron Waves