Nakahara Sumio | High-Technology Research Center
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概要
High-Technology Research Center | 論文
- Simulation Models for Silicon-on Insulator Tunneling-Barrie-Junction Metal-Oxide-Semiconductor Field-Effect Transistor and Performance Perspective
- Simulation Models for Silicon-on-Insulator Tunneling-Barrier-Junction Metal-Oxide-Semiconductor Field-Effect Transistor and Performance Perspective
- Significant initial stress under cyclic application of constant-current stress to thin SiO_2 films
- Simulation Models for Silicon-on-Insulator Tunneling-Barrier-Junction Metal–Oxide–Semiconductor Field-Effect Transistor and Performance Perspective
- Physics-Based Analytical Model of Quantum-Mechanical Electron Wave Function Penetration into Thin Dielectric Films and Capacitance Evaluation