HATAKEYAMA Iwao | ULSI Research Center, TOSHIBA Corporation
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概要
ULSI Research Center, TOSHIBA Corporation | 論文
- Microfabrication of X-Ray Absorber W Utilizing Al_2O_3 as an Etching Mask
- Fabrication of an ultra Low Stress Tungsten Absorber for X-Ray Masks : Lithography Technology
- The Effects of HCl Added to Chemical Vapor Deposition Source Gases for Producing a SiC X-Ray Mask Membrane
- Effects of Mask Line-and-Space Ratio in Replicating near-0.1-μm Patterns in X-Ray Lithography
- Sub-0.15 μm Pattern Replication Using a Low-Contrast X-Ray Mask