SATO Tsutomu | Process & Manufactruing Engineering Center, Semiconductor Company, Toshiba Corporation
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概要
Process & Manufactruing Engineering Center, Semiconductor Company, Toshiba Corporation | 論文
- Fabrication of Silicon-on-Nothing Structure by Substrate Engineering Using the Empty-Space-in-Silicon Formation Technique
- Micro-structure Transformation of Silicon : A Newly Developed Transformation Technology for Patternin Silicon Surfaces using the Surface Migration of Silico Atoms by Hydrogen Annealing
- Novel Elevated Source/Drain Technology for FinFET Overcoming Agglomeration and Facet Problems Utilizing Solid Phase Epitaxy
- Retarding Mechanism of Si Selective Epitaxial Growth on CMOS Structure due to Doped Arsenic in the Si Substrate
- Facet-Free Si Selective Epitaxial Growth Adaptable to Elevated Source/Drain MOSFETs with Narrow Shallow Trench Isolation