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社団法人応用物理学会 | 論文
- Energy Level Study of Phosphorus-Ion-Implanted ZnSe
- Formation of High Resistance Region in GaAs by Ga Focused-Ion-Beam Implantation
- Magnetic Annealing Effect of Amorphous (Fe_Co_x)_Si_B_ Alloys
- Formation and Dielectric Properties of Glass in the System As-Te
- Trap Depth of KTaO_3 Doped with Transition Metal Ions : APPLICATIONS AND FUNDAMENTALS
- Kinetics of ESR Lines and Photocurrent in KTaO_3 Doped with Ni
- The Precipitation Mode in Co-10 at.% Be Alloy
- Frequency and Time Sources-Past, Present, and Future
- Superconducting Radiation Detectors and Their Future Perspectives
- Theory of the Growth Resistance of Atomically Rough Surfaces of ^4He Crystals : I. QUANTUM LIQUIDS AND SOLIDS : Interfaces of He
- Chromatic Correction of High-Performance Solid Immersion Lens Systems
- New Ga-Induced Superstructures on Si(111) Surfaces
- Influence of Boundaries on the Phase Transition Point in Ferroelectric Smectics
- Crystallographic, Electric and Thermochemieal Properties of the Perovskite-Type Ln_Sr_xCoO_3 (Ln: Lanthanoid Element)
- Deep Impurity Levels of Cobalt in Silicon
- Variations of Crystal Magnetic Anisotropy of Mo-Fe-Ni Alloys with Heat Treatments
- Thermal Expansion Coefficients of Alkali Halides and Alkaline-Earth Fluorides
- Stabilization of the Pressure Difference in a Capillary-Type Viscometer with a Feedback System
- Negative Photoconductivity in Epitaxial GaAs Grown on Chrome-Doped Substrate
- Materials Design of Transparent and Half-Metallic Ferromagnets in V- or Cr-Doped ZnS, ZnSe and ZnTe without P- or N-type Doping Treatment