A 'Self-Body-Biased' SOI MOSFET: A Novel Body-Voltage-Controlled SOI MOSFET for Low Voltage Applications

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-04-30

著者

• Terauchi Mamoru

  Department Of Computer Engineering Faculty Of Information Science Hiroshima City University

• FUNAKOSHI Shichio

  Department of Computer Engineering, Faculty of Information Science, Hiroshima City University

• Funakoshi Shichio

  Department Of Computer Engineering Faculty Of Information Science Hiroshima City University

関連論文

• Selectable Logarithmic/Linear Response Active Pixel Sensor Cell with Reduced Fixed-Pattern-Noise Based on Dynamic Threshold MOS Operation
• A 'Self-Body-Biased' SOI MOSFET: A Novel Body-Voltage-Controlled SOI MOSFET for Low Voltage Applications
• SOI SRAM/DRAM Cells for 0.5 V Operation
• A Wide-Dynamic-Range Photodiode-Type Active Pixel Sensor Cell with Seamlessly Combined Logarithmic–Linear–Logarithmic Response
• Novel Operation Scheme for Realizing Combined Linear-Logarithmic Response in Photodiode-Type Active Pixel Sensor Cells
• A 'Self-Body-Biased' SOI MOSFET: A Novel Body-Voltage-Controlled SOI MOSFET for Low Voltage Applications

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