Structure and Photoluminescence Study of InGaAs/GaAs Quantum Dots Grown via Cycled (InAs)_n/(GaAs)_n Monolayer Deposition
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-03-15
著者
-
Xu Bo
Key Laboratory Of Semiconductor Materials Sciences Institute Of Semiconductors Chinese Academy Of Sc
-
HE Jun
Key Laboratory of Semiconductor Materials Sciences, Institute of Semiconductors, Chinese Academy of
-
WANG Xiao-Dong
Key Laboratory of Semiconductor Materials Sciences, Institute of Semiconductors, Chinese Academy of
-
WANG Zhang-Guo
Key Laboratory of Semiconductor Materials Sciences, Institute of Semiconductors, Chinese Academy of
-
QU Sheng-Chun
Key Laboratory of Semiconductor Materials Sciences, Institute of Semiconductors, Chinese Academy of
-
He Jun
Key Laboratory Of Semiconductor Materials Sciences Institute Of Semiconductors Chinese Academy Of Sc
-
Wang Zhang-guo
Key Laboratory Of Semiconductor Materials Sciences Institute Of Semiconductors Chinese Academy Of Sc
-
Wang Xiao-dong
Key Laboratory Of Semiconductor Materials Sciences Institute Of Semiconductors Chinese Academy Of Sc
関連論文
- Structure and Photoluminescence Study of InGaAs/GaAs Quantum Dots Grown via Cycled (InAs)_n/(GaAs)_n Monolayer Deposition
- Structure and Photoluminescence Study of InGaAs/GaAs Quantum Dots Grown via Cycled (InAs)n/(GaAs)n Monolayer Deposition