Structure and Photoluminescence Study of InGaAs/GaAs Quantum Dots Grown via Cycled (InAs)n/(GaAs)n Monolayer Deposition
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概要
- 論文の詳細を見る
We report the morphology of an InGaAs nanostructure grown by molecular beam epitaxy via cycled (InAs)n/(GaAs)n monolayer deposition. Atomic force microscopy images clearly show that varying monolayer deposition per cycle has significant influence on the size, density and shape of the InGaAs nanostructure. Low-temperature photoluminescence spectra show the effect of $n$ on the optical quality, and 1.35 μm photoluminescence with a linewidth of only 19.2 meV at room temperature has been achieved in the (InAs)1/(GaAs)1 structure.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-03-15
著者
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Xu Bo
Key Laboratory Of Semiconductor Materials Sciences Institute Of Semiconductors Chinese Academy Of Sc
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He Jun
Key Laboratory Of Semiconductor Materials Sciences Institute Of Semiconductors Chinese Academy Of Sc
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Qu Sheng-chun
Key Laboratory Of Semiconductor Materials Sciences Institute Of Semiconductors Chinese Academy Of Sc
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Wang Zhang-guo
Key Laboratory Of Semiconductor Materials Sciences Institute Of Semiconductors Chinese Academy Of Sc
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Wang Xiao-Dong
Key Laboratory of Semiconductor Materials Sciences, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China
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Wang Xiao-Don
Key Laboratory of Semiconductor Materials Sciences, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China
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Qu Sheng-Chun
Key Laboratory of Semiconductor Materials Sciences, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China
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Xu Bo
Key Laboratory of Semiconductor Materials Sciences, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China
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He Jun
Key Laboratory of Semiconductor Materials Sciences, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China
関連論文
- Structure and Photoluminescence Study of InGaAs/GaAs Quantum Dots Grown via Cycled (InAs)_n/(GaAs)_n Monolayer Deposition
- Structure and Photoluminescence Study of InGaAs/GaAs Quantum Dots Grown via Cycled (InAs)n/(GaAs)n Monolayer Deposition