Reduction of Stacking Fault Density during SiC Bulk Crystal Growth in the [112^^-0] Direction
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2003-03-15
著者
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Ohtani Noboru
Ultra-low-loss Power Device Technology Research Body (upr)
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Katsuno Masakazu
Ultra-low-loss Power Device Technology Research Body (upr)
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Fujimoto Tatsuo
Ultra-low-loss Power Device Technology Research Body (upr)
関連論文
- Reduction of Stacking Fault Density during SiC Bulk Crystal Growth in the [112^^-0] Direction
- Reduction of Stacking Fault Density during SiC Bulk Crystal Growth in the [$11\bar{2}0$] Direction