Reduction of Stacking Fault Density during SiC Bulk Crystal Growth in the [$11\bar{2}0$] Direction

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概要

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• Stacking fault density was significantly reduced during seeded sublimation growth of silicon carbide (SiC) single crystals in the [$11\bar{2}0$] direction by growing the crystals on a ($11\bar{2}0$) seed crystal several degrees off-oriented toward $\langle 0001\rangle$. The density of the basal plane stacking faults rapidly decreased from 100–150 cm-1 to ${\sim}10$ cm-1 as the degree of off-orientation was increased. The results indicate that the stacking fault formation is a kinetically induced process, and that the introduction of off-orientation prevents the stacking fault formation through modification of the surface growth kinetics.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2003-03-15

著者

• Ohtani Noboru

  Ultra-low-loss Power Device Technology Research Body (upr)

• Katsuno Masakazu

  Ultra-low-loss Power Device Technology Research Body (upr)

• Fujimoto Tatsuo

  Ultra-low-loss Power Device Technology Research Body (upr)

• Katsuno Masakazu

  Ultra-Low-Loss Power Device Technology Research Body (UPR), c/o National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

• Ohtani Noboru

  Ultra-Low-Loss Power Device Technology Research Body (UPR), c/o National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

関連論文

• Reduction of Stacking Fault Density during SiC Bulk Crystal Growth in the [112^^-0] Direction
• Reduction of Stacking Fault Density during SiC Bulk Crystal Growth in the [$11\bar{2}0$] Direction

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