Monocrystalline InN Films Grown at High Rate by Organometallic Vapor Phase Epitaxy with Nitrogen Plasma Activation Supported by Gyrotron Radiation
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概要
- 論文の詳細を見る
InN hexagonal monocrystalline films were grown on yttria-stabilized zirconia (YSZ) (111) and Al<inf>2</inf>O<inf>3</inf>(0001) by the organometallic vapor phase epitaxy method with nitrogen activation in the electron cyclotron resonance discharge, supported by gyrotron radiation. The film growth rate reached 10 μm/h. In this paper, we present data on the morphology, structure, and photoluminescence properties of the grown films.
- 2013-11-25
著者
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Golubev Sergey
Institute Of Applied Physics Russian Academy Of Sciences
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Vodopyanov Alexander
Institute Of Applied Physics Russian Academy Of Sciences
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Mansfeld Dmitry
Institute of Applied Physics, Russian Academy of Sciences, Nizhniy Novgorod 603950, Russia
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Buzynin Yurii
Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhniy Novgorod 603950, Russia
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Drozdov Yurii
Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhniy Novgorod 603950, Russia
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Khrykin Oleg
Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhniy Novgorod 603950, Russia
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Lukyanov Andrei
Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhniy Novgorod 603950, Russia
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Viktorov Mikhail
Institute of Applied Physics, Russian Academy of Sciences, Nizhniy Novgorod 603950, Russia
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Shashkin Vladimir
Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhniy Novgorod 603950, Russia
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Yunin Pavel
Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhniy Novgorod 603950, Russia
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- Monocrystalline InN Films Grown at High Rate by Organometallic Vapor Phase Epitaxy with Nitrogen Plasma Activation Supported by Gyrotron Radiation