Indium Nitride Film Growth by Metal Organic Chemical Vapor Deposition with Nitrogen Activation in Electron Cyclotron Resonance Discharge Sustained by 24 GHz Gyrotron Radiation (Special Issue : Recent Advances in Nitride Semiconductors)
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概要
著者
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Golubev Sergey
Institute Of Applied Physics Russian Academy Of Sciences
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Vodopyanov Alexander
Institute Of Applied Physics Russian Academy Of Sciences
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Vodopyanov Alexander
Institute of Applied Physics, Russian Academy of Sciences, Nizhniy Novgorod 603950, Russia
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Mansfeld Dmitry
Institute of Applied Physics, Russian Academy of Sciences, Nizhniy Novgorod 603950, Russia
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Buzynin Yurii
Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhniy Novgorod 603950, Russia
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Drozdov Mikhail
Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhniy Novgorod 603950, Russia
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Drozdov Yurii
Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhniy Novgorod 603950, Russia
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Khrykin Oleg
Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhniy Novgorod 603950, Russia
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Lukyanov Andrei
Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhniy Novgorod 603950, Russia
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Viktorov Mikhail
Institute of Applied Physics, Russian Academy of Sciences, Nizhniy Novgorod 603950, Russia
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Shashkin Vladimir
Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhniy Novgorod 603950, Russia
関連論文
- Mirror-Trapped Plasma Heated by High-Power Millimeter-Wave Radiation as an Electron-Cyclotron-Resonanse Source of Soft X-Rays
- Mirror-Trapped Plasma Heated by High-Power Millimeter-Wave Radiation as an Electron-Cyclotron-Resonanse Source of Soft X-Rays
- Indium Nitride Film Growth by Metal Organic Chemical Vapor Deposition with Nitrogen Activation in Electron Cyclotron Resonance Discharge Sustained by 24 GHz Gyrotron Radiation
- Indium Nitride Film Growth by Metal Organic Chemical Vapor Deposition with Nitrogen Activation in Electron Cyclotron Resonance Discharge Sustained by 24 GHz Gyrotron Radiation (Special Issue : Recent Advances in Nitride Semiconductors)
- Monocrystalline InN Films Grown at High Rate by Organometallic Vapor Phase Epitaxy with Nitrogen Plasma Activation Supported by Gyrotron Radiation