Design and Simulation of Novel Enhancement Mode 5-20 kV GaN Vertical Superjunction High Electron Mobility Transistors for Smart Grid Applications (Special Issue : Recent Advances in Nitride Semiconductors)

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概要

• 論文の詳細を見る

著者

• Chow T.

  Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A.

• Li Zhongda

  Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A.

関連論文

• Metal--Oxide--Semiconductor Interface and Dielectric Properties of Atomic Layer Deposited SiO
• Avalanche Breakdown Design Parameters in GaN
• Design and Simulation of Novel Enhancement Mode 5-20 kV GaN Vertical Superjunction High Electron Mobility Transistors for Smart Grid Applications (Special Issue : Recent Advances in Nitride Semiconductors)
• Metal-Oxide-Semiconductor Interface and Dielectric Properties of Atomic Layer Deposited SiO₂ on GaN (Special Issue : Recent Advances in Nitride Semiconductors)

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