Waveguide Optimization for Semipolar (In,Al,Ga)N Lasers (Special Issue : Recent Advances in Nitride Semiconductors)
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概要
著者
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Kneissl Michael
Technische Universität Berlin, EW 6-1, Institut für Festkörperphysik, Hardenbergstr. 36, 10623 Berlin, Germany
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Frentrup Martin
Technische Universität Berlin, Institut für Festkörperphysik, 10623 Berlin, Germany
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Weyers Markus
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
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Rass Jens
Technische Universität Berlin, Institut für Festkörperphysik, 10623 Berlin, Germany
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Ploch Simon
Technische Universität Berlin, Institut für Festkörperphysik, 10623 Berlin, Germany
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Wernicke Tim
Technische Universität Berlin, Institut für Festkörperphysik, 10623 Berlin, Germany
関連論文
- Influence of a GaN Cap Layer on the Morphology and the Physical Properties of Embedded Self-Organized InN Quantum Dots on GaN(0001) Grown by Metal--Organic Vapour Phase Epitaxy
- Energetics of Quantum Dot Formation and Relaxation of InGaAs on GaAs(001)
- Waveguide Optimization for Semipolar (In,Al,Ga)N Lasers
- AlGaN Metal--Semiconductor--Metal Photodetectors on Planar and Epitaxial Laterally Overgrown AlN/Sapphire Templates for the Ultraviolet C Spectral Region
- Influence of Carrier Lifetime, Transit Time, and Operation Voltages on the Photoresponse of Visible-Blind AlGaN Metal--Semiconductor--Metal Photodetectors
- Waveguide Optimization for Semipolar (In,Al,Ga)N Lasers (Special Issue : Recent Advances in Nitride Semiconductors)
- Energetics of Quantum Dot Formation and Relaxation of InGaAs on GaAs(001)
- Influence of Carrier Lifetime, Transit Time, and Operation Voltages on the Photoresponse of Visible-Blind AlGaN Metal-Semiconductor-Metal Photodetectors (Special Issue : Recent Advances in Nitride Semiconductors)
- AlGaN Metal--Semiconductor--Metal Photodetectors on Planar and Epitaxial Laterally Overgrown AlN/Sapphire Templates for the Ultraviolet C Spectral Region