Waveguide Optimization for Semipolar (In,Al,Ga)N Lasers

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概要

• 論文の詳細を見る

• In this work the optical waveguiding in semipolar InGaN-based laser diodes is analyzed. Different designs of the separate confinement heterostructure with AlGaN or GaN cladding layers and GaN or InGaN waveguide layers are studied. The influence of waveguide material, thickness and composition on the optical confinement factor \Gamma, the accumulated strain energy E and the refractive index contrast is calculated. Measurements of the threshold and the far field intensity distributions of lasers with differing waveguide design confirm the predictions from model calculations. The optimum waveguide for a 410 nm single quantum well laser is found to consist of a symmetric In<inf>0.04</inf>Ga<inf>0.96</inf>N waveguide of 2\times 85 nm thickness with GaN cladding layers.

• 2013-08-25

著者

• Kneissl Michael

  Technische Universität Berlin, EW 6-1, Institut für Festkörperphysik, Hardenbergstr. 36, 10623 Berlin, Germany

• Frentrup Martin

  Technische Universität Berlin, Institut für Festkörperphysik, 10623 Berlin, Germany

• Weyers Markus

  Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany

• Rass Jens

  Technische Universität Berlin, Institut für Festkörperphysik, 10623 Berlin, Germany

• Ploch Simon

  Technische Universität Berlin, Institut für Festkörperphysik, 10623 Berlin, Germany

• Wernicke Tim

  Technische Universität Berlin, Institut für Festkörperphysik, 10623 Berlin, Germany

関連論文

• Influence of a GaN Cap Layer on the Morphology and the Physical Properties of Embedded Self-Organized InN Quantum Dots on GaN(0001) Grown by Metal--Organic Vapour Phase Epitaxy
• Energetics of Quantum Dot Formation and Relaxation of InGaAs on GaAs(001)
• Waveguide Optimization for Semipolar (In,Al,Ga)N Lasers
• AlGaN Metal--Semiconductor--Metal Photodetectors on Planar and Epitaxial Laterally Overgrown AlN/Sapphire Templates for the Ultraviolet C Spectral Region
• Influence of Carrier Lifetime, Transit Time, and Operation Voltages on the Photoresponse of Visible-Blind AlGaN Metal--Semiconductor--Metal Photodetectors
• Waveguide Optimization for Semipolar (In,Al,Ga)N Lasers (Special Issue : Recent Advances in Nitride Semiconductors)
• Energetics of Quantum Dot Formation and Relaxation of InGaAs on GaAs(001)
• Influence of Carrier Lifetime, Transit Time, and Operation Voltages on the Photoresponse of Visible-Blind AlGaN Metal-Semiconductor-Metal Photodetectors (Special Issue : Recent Advances in Nitride Semiconductors)
• AlGaN Metal--Semiconductor--Metal Photodetectors on Planar and Epitaxial Laterally Overgrown AlN/Sapphire Templates for the Ultraviolet C Spectral Region

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