Photoluminescence Behaviors of Orange-Light-Emitting InGaN-Based Nanocolumns Exhibiting High Internal Quantum Efficiency (17–22%) (Special Issue : Recent Advances in Nitride Semiconductors)
スポンサーリンク
概要
著者
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Vadivelu Ramesh
Faculty of Science and Technology, Sophia University, Chiyoda, Tokyo 102-8554, Japan
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Igawa Yusuke
Faculty of Science and Technology, Sophia University, Chiyoda, Tokyo 102-8554, Japan
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Kishino Katsumi
Faculty of Science and Technology, Sophia University, Chiyoda, Tokyo 102-8554, Japan
関連論文
- 633 nm Red Emissions from InGaN Nanocolumn Light-Emitting Diode by Radio Frequency Plasma Assisted Molecular Beam Epitaxy
- Photoluminescence Behaviors of Orange-Light-Emitting InGaN-Based Nanocolumns Exhibiting High Internal Quantum Efficiency (17--22%)
- Photoluminescence Behaviors of Orange-Light-Emitting InGaN-Based Nanocolumns Exhibiting High Internal Quantum Efficiency (17–22%) (Special Issue : Recent Advances in Nitride Semiconductors)