Photoluminescence Behaviors of Orange-Light-Emitting InGaN-Based Nanocolumns Exhibiting High Internal Quantum Efficiency (17--22%)

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概要

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• We fabricated ordered GaN nanocolumns (NCs) with InGaN/GaN multiple quantum wells (MQWs) that emitted light at wavelengths of 590--600 nm by rf-plasma assisted molecular beam epitaxy. The NCs exhibited sharp emission with a full width at half maximum of 44--45 nm, and the internal quantum efficiency (IQE) was evaluated to be 17 to 22% by investigating the temperature dependence of the photoluminescence of the NCs. Although the accuracy of the IQE value is still debatable, we claim that the NCs exhibited an IQE that compared favorably with that of green-emitting film InGaN MQWs grown by metal--organic chemical vapor deposition.

• 2013-08-25

著者

• Vadivelu Ramesh

  Faculty of Science and Technology, Sophia University, Chiyoda, Tokyo 102-8554, Japan

• Igawa Yusuke

  Faculty of Science and Technology, Sophia University, Chiyoda, Tokyo 102-8554, Japan

• Kishino Katsumi

  Faculty of Science and Technology, Sophia University, Chiyoda, Tokyo 102-8554, Japan

関連論文

• 633 nm Red Emissions from InGaN Nanocolumn Light-Emitting Diode by Radio Frequency Plasma Assisted Molecular Beam Epitaxy
• Photoluminescence Behaviors of Orange-Light-Emitting InGaN-Based Nanocolumns Exhibiting High Internal Quantum Efficiency (17--22%)
• Photoluminescence Behaviors of Orange-Light-Emitting InGaN-Based Nanocolumns Exhibiting High Internal Quantum Efficiency (17–22%) (Special Issue : Recent Advances in Nitride Semiconductors)

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