633 nm Red Emissions from InGaN Nanocolumn Light-Emitting Diode by Radio Frequency Plasma Assisted Molecular Beam Epitaxy

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概要

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• GaN nanocolumns exhibiting high light-extraction property provide a platform for high-performance nano-devices. To improve the performance of nanocolumn LEDs, uniform arrays of InGaN-based multi quantum well (MQW) nanocolumns were fabricated. We report on red emitting nanocolumn LEDs with InGaN MQW grown on GaN templates by radio frequency plasma assisted molecular beam epitaxy (RF-MBE), for the first time. The electroluminescence peak wavelength and the full-width at half maximum at a drive current of 5 mA were 633 nm and 185 meV, respectively for the LEDs. It demonstrated a blue-shift of 5 nm for the 20 mA, indicating negligible polarization and band filling effects.

• 2013-08-25

著者

• Vadivelu Ramesh

  Faculty of Science and Technology, Sophia University, Chiyoda, Tokyo 102-8554, Japan

• Igawa Yusuke

  Faculty of Science and Technology, Sophia University, Chiyoda, Tokyo 102-8554, Japan

• Kishino Katsumi

  Faculty of Science and Technology, Sophia University, Chiyoda, Tokyo 102-8554, Japan

関連論文

• 633 nm Red Emissions from InGaN Nanocolumn Light-Emitting Diode by Radio Frequency Plasma Assisted Molecular Beam Epitaxy
• Photoluminescence Behaviors of Orange-Light-Emitting InGaN-Based Nanocolumns Exhibiting High Internal Quantum Efficiency (17--22%)
• Photoluminescence Behaviors of Orange-Light-Emitting InGaN-Based Nanocolumns Exhibiting High Internal Quantum Efficiency (17–22%) (Special Issue : Recent Advances in Nitride Semiconductors)

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