Abruptness Improvement of the Interfaces of AlGaN/GaN Superlattices by Cancelling Asymmetric Diffusion (Special Issue : Recent Advances in Nitride Semiconductors)
スポンサーリンク
概要
著者
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Cai Duanjun
Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, China
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Chen Xiaohong
Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, China
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Xu Hongmei
Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, China
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Lin Na
Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, China
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Xu Fuchun
Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, China
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Chen Hangyang
Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, China
関連論文
- Abruptness Improvement of the Interfaces of AlGaN/GaN Superlattices by Cancelling Asymmetric Diffusion
- Abruptness Improvement of the Interfaces of AlGaN/GaN Superlattices by Cancelling Asymmetric Diffusion (Special Issue : Recent Advances in Nitride Semiconductors)