Chen Hangyang | Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, China
スポンサーリンク
概要
- Chen Hangyangの詳細を見る
- 同名の論文著者
- Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, Chinaの論文著者
関連著者
-
Cai Duanjun
Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, China
-
Chen Xiaohong
Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, China
-
Xu Hongmei
Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, China
-
Lin Na
Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, China
-
Xu Fuchun
Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, China
-
Chen Hangyang
Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, China
著作論文
- Abruptness Improvement of the Interfaces of AlGaN/GaN Superlattices by Cancelling Asymmetric Diffusion
- Abruptness Improvement of the Interfaces of AlGaN/GaN Superlattices by Cancelling Asymmetric Diffusion (Special Issue : Recent Advances in Nitride Semiconductors)