Abruptness Improvement of the Interfaces of AlGaN/GaN Superlattices by Cancelling Asymmetric Diffusion
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概要
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Interfacial abruptness plays a critical role in affecting the quantum confinement effect in heterostructures. Here, we accurately determine the inter-diffusion depth across the AlGaN/GaN interfaces and propose a simple blocking scheme to effectively improve the superlattice abruptness. It is found that the Al diffusion depth at the upper and lower interfaces of the AlGaN barrier appears considerably asymmetric. Such difference leads to the gradient interfacial region and the asymmetric quantum well shape. A pair of ultra-thin blocking layers is introduced to the GaN/AlGaN interface to block the Al downward diffusion. After the blocking treatment, the interfacial abruptness is improved and the light emission intensity from the superlattice can be effectively enhanced.
- 2013-08-25
著者
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Cai Duanjun
Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, China
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Chen Xiaohong
Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, China
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Xu Hongmei
Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, China
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Lin Na
Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, China
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Xu Fuchun
Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, China
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Chen Hangyang
Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, China
関連論文
- Abruptness Improvement of the Interfaces of AlGaN/GaN Superlattices by Cancelling Asymmetric Diffusion
- Abruptness Improvement of the Interfaces of AlGaN/GaN Superlattices by Cancelling Asymmetric Diffusion (Special Issue : Recent Advances in Nitride Semiconductors)