Precise Determination of the Direct-Indirect Band Gap Energy Crossover Composition in Al[x]Ga₁₋xAs
スポンサーリンク
概要
著者
-
Reno John
Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, NM 87123, U.S.A.
-
Beaton Daniel
National Renewable Energy Lab (NREL), Golden, CO 80401, U.S.A.
-
Alberi Kirstin
National Renewable Energy Lab (NREL), Golden, CO 80401, U.S.A.
-
Fluegel Brian
National Renewable Energy Lab (NREL), Golden, CO 80401, U.S.A.
-
Mascarenhas Angelo
National Renewable Energy Lab (NREL), Golden, CO 80401, U.S.A.
関連論文
- Raman Scattering Signature of a Localized-to-Delocalized Transition at the Inception of a Dilute Abnormal GaAs
- Precise Determination of the Direct--Indirect Band Gap Energy Crossover Composition in Al
- Precise Determination of the Direct-Indirect Band Gap Energy Crossover Composition in Al[x]Ga₁₋xAs
- Raman Scattering Signature of a Localized-to-Delocalized Transition at the Inception of a Dilute Abnormal GaAs₁₋xNx Alloy
- Probing carrier lifetimes at dislocations in epitaxial CdTe