Raman Scattering Signature of a Localized-to-Delocalized Transition at the Inception of a Dilute Abnormal GaAs
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概要
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We identify the signature of a localized-to-delocalized transition in the resonant Raman scattering spectra from GaAs<inf>1-x</inf>N<inf>x</inf>. Our measurements in the ultradilute nitrogen doping concentrations demonstrate an energy shift in the line width resonance of the LO phonon. With decreasing nitrogen concentration, the E_{W} line width resonance energy reduces abruptly by ca. 47 meV at x\approx0.35%. This value corresponds to the concentration at which GaAs<inf>1-x</inf>N<inf>x</inf>has been recently shown to transition from an impurity regime to an alloy regime. Our study elucidates the evolution of dilute abnormal alloys and their Raman response.
- 2013-05-25
著者
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Mascarenhas Angelo
National Renewable Energy Lab (NREL), Golden, CO 80401, U.S.A.
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Mascarenhas Angelo
National Renewable Energy Laboratory, Golden, CO 80401, U.S.A.
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Mialitsin Aleksej
National Renewable Energy Laboratory, Golden, CO 80401, U.S.A.
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