Precise Determination of the Direct--Indirect Band Gap Energy Crossover Composition in Al
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概要
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MBE grown Al<inf>x</inf>Ga<inf>1-x</inf>As samples, with x in the range 0.282--0.424, were studied by using time-integrated and time-resolved photoluminescence spectroscopy, photo-modulation reflectance spectroscopy and photoluminescence excitation spectroscopy. The direct and indirect band gap transitions are observed simultaneously in two Al<inf>x</inf>Ga<inf>1-x</inf>As samples with x=0.387 and 0.396. An exact determination of the direct--indirect crossover composition at low temperatures is found at a direct band gap energy of 2.059 eV, which corresponds to a aluminum content of [\text{Al}]=38.4\pm 0.3%.
- 2013-07-25
著者
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Reno John
Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, NM 87123, U.S.A.
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Beaton Daniel
National Renewable Energy Lab (NREL), Golden, CO 80401, U.S.A.
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Alberi Kirstin
National Renewable Energy Lab (NREL), Golden, CO 80401, U.S.A.
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Fluegel Brian
National Renewable Energy Lab (NREL), Golden, CO 80401, U.S.A.
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Mascarenhas Angelo
National Renewable Energy Lab (NREL), Golden, CO 80401, U.S.A.
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