Effects of Sulfur Passivation on GaSb Metal-Oxide-Semiconductor Capacitors with Neutralized and Unneutralized (NH₄)₂S Solutions of Varied Concentrations
スポンサーリンク
概要
著者
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Wang Jing
Tsinghua National Laboratory For Information Science And Technology
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Xu Jun
Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of China
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Zhao Lianfeng
Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of China
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Tan Zhen
Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of China
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Bai Rongxu
Beneq Oy Shanghai Representative Office, Shanghai 201203, People's Republic of China
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Cui Ning
Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of China
関連論文
- R & D Progress in Wireless Communications in China : A Review on Chinese High-Tech R & D Programs for Wireless Technology(2006 International Symposium on Antennas and Propagation)
- Effects of Sulfur Passivation on GaSb Metal-Oxide-Semiconductor Capacitors with Neutralized and Unneutralized (NH₄)₂S Solutions of Varied Concentrations
- A Two-Dimensional Analytical Model for Tunnel Field Effect Transistor and Its Applications
- Effects of Sulfur Passivation on GaSb Metal-Oxide-Semiconductor Capacitors with Neutralized and Unneutralized (NH_4)_2S Solutions of Varied Concentrations