Effects of Sulfur Passivation on GaSb Metal-Oxide-Semiconductor Capacitors with Neutralized and Unneutralized (NH_4)_2S Solutions of Varied Concentrations
スポンサーリンク
概要
- 論文の詳細を見る
- 2013-05-25
著者
-
Wang Jing
Tsinghua National Laboratory For Information Science And Technology
-
Xu Jun
Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of China
-
Zhao Lianfeng
Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of China
-
TAN Zhen
Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University
-
CUI Ning
Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University
-
BAI Rongxu
Beneq Oy Shanghai Representative Office
関連論文
- R & D Progress in Wireless Communications in China : A Review on Chinese High-Tech R & D Programs for Wireless Technology(2006 International Symposium on Antennas and Propagation)
- Effects of Sulfur Passivation on GaSb Metal-Oxide-Semiconductor Capacitors with Neutralized and Unneutralized (NH₄)₂S Solutions of Varied Concentrations
- A Two-Dimensional Analytical Model for Tunnel Field Effect Transistor and Its Applications
- Effects of Sulfur Passivation on GaSb Metal-Oxide-Semiconductor Capacitors with Neutralized and Unneutralized (NH_4)_2S Solutions of Varied Concentrations