Analysis of P-Doped Polycrystalline Silicon Missing of W-Polycide Gate for 2X nm NAND Flash
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Yang Wen-Chung
Powerchip Technology Corporation, Hsinchu, Taiwan 300, R.O.C.
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Chen Chun-Chi
Powerchip Technology Corporation, Hsinchu, Taiwan 300, R.O.C.
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Yin Te-Yuan
Powerchip Technology Corporation, Hsinchu, Taiwan 300, R.O.C.
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Chien Hung-Ju
Powerchip Technology Corporation, Hsinchu, Taiwan 300, R.O.C.
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Ying Tzung-Hua
Powerchip Technology Corporation, Hsinchu, Taiwan 300, R.O.C.
関連論文
- Analysis of Peeling Mechanism in Annealed Tungsten Silicide Thin Films
- Analysis of P-Doped Polycrystalline Silicon Missing of W-Polycide Gate for 2X nm NAND Flash
- Analysis of P-Doped Polycrystalline Silicon Missing of W-Polycide Gate for 2X nm NAND Flash