Random Interface-Traps-Induced Electrical Characteristic Fluctuation in 16-nm-Gate High-κ/Metal Gate Complementary Metal-Oxide-Semiconductor Device and Inverter Circuit (Special Issue : Solid State Devices and Materials (2))

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Li Yiming

  Parallel and Scientific Computing Laboratory, Department of Electrical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

• Cheng Hui-Wen

  Parallel and Scientific Computing Laboratory, Department of Electrical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

関連論文

• Random Interface-Traps-Induced Electrical Characteristic Fluctuation in 16-nm-Gate High-κ/Metal Gate Complementary Metal-Oxide-Semiconductor Device and Inverter Circuit (Special Issue : Solid State Devices and Materials (2))

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