Transient Current of Resistive Switching of a NiOx Resistive Memory
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Wang Hung-Yu
Department of Electronic Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 807, Taiwan, R.O.C.
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Liu Chih-Yi
Department of Electronic Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 807, R.O.C.
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Ho Jen-Yen
Department of Electronic Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 807, Taiwan, R.O.C.
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Huang Jyun-Jie
Department of Electronic Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 807, Taiwan, R.O.C.
関連論文
- Transient Current of Resistive Switching of a NiOx Resistive Memory
- Effects of Ultraviolet Illumination on Resistive Switching Properties of CuxO Thin Film
- Improved Resistive Switching Dispersion of NiOx Thin Film by Cu-Doping Method