Improved Resistive Switching Dispersion of NiOx Thin Film by Cu-Doping Method
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概要
- 論文の詳細を見る
Thermally grown NiOx and Cu-doped NiOx (Cu:NiOx) thin films were fabricated as resistive layers for Cu/NiOx/Pt and Cu/Cu:NiOx/Pt devices and their resistive switching properties were investigated. The two devices had reversible resistive switching properties, nondestructive readout, and long retention. However, the Cu/NiOx/Pt device had large voltage dispersions in the resistive switching operation. This work improved the voltage dispersions of the resistive switching operation by Cu-doping in the NiOx thin film. The operating voltages of the Cu/Cu:NiOx/Pt device were also smaller than those of the Cu/NiOx/Pt device. This study suggests the conducting filament model to explain resistive switching behavior and improved resistive switching dispersions. The Cu-doping method produced more defects within the NiOx thin film, which improved voltage dispersion and decreased operation voltages.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2010-05-25
著者
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Hung-Yu Wang
Department of Electronic Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 807, Taiwan, R.O.C.
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Chun-Hung Lai
Department of Electronic Engineering, National United University, Miaoli 300, Taiwan, R.O.C.
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Liu Chih-Yi
Department of Electronic Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 807, Taiwan, R.O.C.
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Lin Xin-Jie
Department of Electronic Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 807, Taiwan, R.O.C.
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Wang Hung-Yu
Department of Electronic Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 807, Taiwan, R.O.C.
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Chih-Yi Liu
Department of Electronic Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 807, Taiwan, R.O.C.
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Liu Chih-Yi
Department of Electronic Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 807, R.O.C.
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Xin-Jie Lin
Department of Electronic Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 807, Taiwan, R.O.C.
関連論文
- Transient Current of Resistive Switching of a NiOx Resistive Memory
- Effects of Ultraviolet Illumination on Resistive Switching Properties of CuxO Thin Film
- Improved Resistive Switching Dispersion of NiOx Thin Film by Cu-Doping Method