Thickness Dependences of Resistivity and Temperature Coefficient of Resistance for Ge Thin Films Sandwiched between Si Layers for Uncooled Infrared Imaging Sensor
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Furukawa Akio
Faculty of Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan
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Yamaki Kazuhiro
Faculty of Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan
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Tai Takashi
Faculty of Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan
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Kinoshita Junichi
Faculty of Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan
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Sekino Shoji
Green Innovation Research Laboratories, NEC Corporation, Tsukuba, Ibaraki 305-8501, Japan
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Nakamura Shin
Green Innovation Research Laboratories, NEC Corporation, Tsukuba, Ibaraki 305-8501, Japan
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Yoshitake Tsutomu
Green Innovation Research Laboratories, NEC Corporation, Tsukuba, Ibaraki 305-8501, Japan
関連論文
- Thickness Dependences of Resistivity and Temperature Coefficient of Resistance for Ge Thin Films Sandwiched between Si Layers for Uncooled Infrared Imaging Sensor
- Calculation of Temperature Coefficient of Resistance for Potential Barrier Structure for Bolometer in Uncooled Infrared Image Sensor