Effect of Initial Bow of Sapphire Substrate on Substrate Curvature during InGaN Growth Stage of Light Emitting Diode Epitaxy
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Aida Hideo
NJC Institute of Technology, Namiki Precision Jewel Co., Ltd., Adachi, Tokyo 123-8511, Japan
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Lee Dong
TurboDisc Operations, Veeco Instruments Inc., Somerset, NJ 08873, U.S.A.
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Belousov Mikhail
TurboDisc Operations, Veeco Instruments Inc., Somerset, NJ 08873, U.S.A.
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Sunakawa Kazuhiko
NJC Institute of Technology, Namiki Precision Jewel Co., Ltd., Adachi, Tokyo 123-8511, Japan
関連論文
- Effect of Initial Bow of Sapphire Substrate on Substrate Curvature during InGaN Growth Stage of Light Emitting Diode Epitaxy
- Reduction of Bowing in GaN-on-Sapphire and GaN-on-Silicon Substrates by Stress Implantation by Internally Focused Laser Processing