Reduction of Bowing in GaN-on-Sapphire and GaN-on-Silicon Substrates by Stress Implantation by Internally Focused Laser Processing

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概要

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• Reduction of the bowing of GaN-on-sapphire and GaN-on-silicon substrates was demonstrated with an internally focused laser processing. Stress implantation was successfully achieved inside the sapphire and silicon substrates by the internally focused laser process to compensate for the strain generated by the GaN/sapphire and GaN/Si systems which resulted in substrate bow reduction. This new approach gives us a larger flexibility in the design engineering of epitaxial and device fabrication processes and thus accelerates the realization of a larger diameter device process with GaN-on-sapphire and GaN-on silicon.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2012-01-25

著者

• Aida Hideo

  NJC Institute of Technology, Namiki Precision Jewel Co., Ltd., Adachi, Tokyo 123-8511, Japan

• Takeda Hidetoshi

  NJC Institute of Technology, Namiki Precision Jewel Co., Ltd., Adachi, Tokyo 123-8511, Japan

• Aota Natsuko

  NJC Institute of Technology, Namiki Precision Jewel Co., Ltd., Adachi, Tokyo 123-8511, Japan

• Koyama Koji

  NJC Institute of Technology, Namiki Precision Jewel Co., Ltd., Adachi, Tokyo 123-8511, Japan

関連論文

• Effect of Initial Bow of Sapphire Substrate on Substrate Curvature during InGaN Growth Stage of Light Emitting Diode Epitaxy
• Reduction of Bowing in GaN-on-Sapphire and GaN-on-Silicon Substrates by Stress Implantation by Internally Focused Laser Processing

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