Atomic-scale simulations of early stage of oxidation of vicinal Si(001) surfaces using a reactive force-field potentials (Special issue: Dielectric thin films for future electron devices: science and technology)

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Chung Yong-chae

  Department Of Ceramic Engineering Hanyang University

• Yoon Geunsup

  Department of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea

• Kim Byung-Hyun

  Department of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea

• Choi Heechae

  Department of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea

• Yun Kyung-Han

  Department of Materials Science and Engineering, Hanyang University, Seoul 133-791, Republic of Korea

• Lee Eung-Kwan

  Department of Materials Science and Engineering, Hanyang University, Seoul 133-791, Republic of Korea

• Hwang Yubin

  Department of Materials Science and Engineering, Hanyang University, Seoul 133-791, Republic of Korea

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