Atomic-Scale Investigation of the Ti/Al(001) Interface: A Molecular Dynamics Simulation
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概要
- 論文の詳細を見る
The intermixing characteristics of Ti thin film deposited on Al(001) substrate at atomic level were investigated by molecular dynamics simulation. The intermixing at Ti/Al(001) interface was limited within only the topmost layer of the Al(001) substrate at 300 K with 0.1 eV incident energy of a Ti atom. The mixing characteristics for Ti/Al(001) such as layer coverage function and mixing length were significantly different from those of the transition metals (TM; Fe, Co, and Ni)/Al(001) systems. The different intermixing behavior can be explained in terms of local acceleration and incorporation energy barrier.
- 2010-06-25
著者
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Lee Soon-Gun
Department of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea
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Yong-Chae Chung
Department of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea
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Byung-Hyun Kim
Department of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea
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Yoon Geunsup
Department of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea
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Kim Byung-Hyun
Department of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea
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Soon-Gun Lee
Department of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea
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Lee Soon-Gun
Department of Ceramic Engineering, Hanyang University, Seoul 133-791, Korea
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Yong-Chae Chung
Department of Materials Science and Engineering, Hanyang University, 17 Hangdang-dong, Seongdong-gu, Seoul 133-791, Republic of Korea
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Geunsup Yoon
Department of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea
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