Numerical analysis of buffer-trap effects on gate lag in AlGaN/GaN high electron mobility transistors

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Nakajima Atsushi

  Faculty Of Science Ehime University

• Horio Kazushige

  Faculty of Systems Engineering, Shibaura Institute of Technology, 307 Fukasaku, Minuma-ku, Saitama 337-8570, Japan

• Fujii Kunitaka

  Faculty of Systems Engineering, Shibaura Institute of Technology, Saitama 337-8570, Japan

関連論文

• Magnetocrystalline Anisotropy Constant K_1 of Ni-Pd Alloys
• Numerical analysis of buffer-trap effects on gate lag in AlGaN/GaN high electron mobility transistors
• Physical Mechanism of Buffer-Related Current Transients and Current Slump in AlGaN/GaN High Electron Mobility Transistors
• Analysis of Lags and Current Collapse in Source-Field-Plate AlGaN/GaN High-Electron-Mobility Transistors
• Analysis of Lags and Current Collapse in Source-Field-Plate AlGaN/GaN High-Electron-Mobility Transistors

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