Analysis of Lags and Current Collapse in Source-Field-Plate AlGaN/GaN High-Electron-Mobility Transistors
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概要
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A two-dimensional transient analysis of source-field-plate AlGaN/GaN high-electron-mobility transistors (HEMTs) is performed by considering a deep donor and a deep acceptor in a buffer layer, and the results are compared with those in the case of gate-field-plate structures. It is shown that the reduction rate of drain lag obtained by introducing a field plate is quantitatively similar between source- and gate-field-plate structures. However, the gate-lag rate is rather higher in the source-field-plate structure because the electric field at the drain edge of the gate is higher in the off state, and hence electron injection into the buffer layer and the resulting trapping effects are more significant. Hence, current collapse is slightly larger in the source-field-plate structure. It is also shown that an optimum SiN passivation layer thickness is required to minimize buffer-related current collapse in source-field-plate AlGaN/GaN HEMTs.
- The Japan Society of Applied Physicsの論文
- 2013-08-25
著者
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Horio Kazushige
Faculty of Systems Engineering, Shibaura Institute of Technology, 307 Fukasaku, Minuma-ku, Saitama 337-8570, Japan
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Horio Kazushige
Faculty of Systems Engineering, Shibaura Institute of Technology, Saitama 337-8570, Japan
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Hanawa Hideyuki
Faculty of Systems Engineering, Shibaura Institute of Technology, Saitama 337-8570, Japan
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Onodera Hiraku
Faculty of Systems Engineering, Shibaura Institute of Technology, Saitama 337-8570, Japan
関連論文
- Numerical analysis of buffer-trap effects on gate lag in AlGaN/GaN high electron mobility transistors
- Physical Mechanism of Buffer-Related Current Transients and Current Slump in AlGaN/GaN High Electron Mobility Transistors
- Analysis of Lags and Current Collapse in Source-Field-Plate AlGaN/GaN High-Electron-Mobility Transistors
- Analysis of Lags and Current Collapse in Source-Field-Plate AlGaN/GaN High-Electron-Mobility Transistors