Tunnel field-effect transistors with extremely low off-current using shadowing effect in drain implantation (Special issue: Microprocesses and nanotechnology)
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Masahara Meishoku
Green Nanoelectronics Center (GNC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
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Ota Hiroyuki
Green Nanoelectronics Center (GNC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
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Mori Takahiro
Green Nanoelectronics Center (GNC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
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Mizubayashi Wataru
Green Nanoelectronics Center (GNC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
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Yasuda Tetsuji
Green Nanoelectronics Center (GNC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
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Maeda Tatsuro
Green Nanoelectronics Center (GNC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
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Liu Yongxun
Green Nanoelectronics Center (GNC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
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Sakamoto Kunihiro
Green Nanoelectronics Center (GNC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
関連論文
- Tunnel field-effect transistors with extremely low off-current using shadowing effect in drain implantation (Special issue: Microprocesses and nanotechnology)
- Tunnel Field-Effect Transistor with Epitaxially Grown Tunnel Junction Fabricated by Source/Drain-First and Tunnel-Junction-Last Processes
- Tunnel Field-Effect Transistor with Epitaxially Grown Tunnel Junction Fabricated by Source/Drain-First and Tunnel-Junction-Last Processes