Liu Yongxun | Green Nanoelectronics Center (GNC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan

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概要

関連著者

Masahara Meishoku
Green Nanoelectronics Center (GNC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
Ota Hiroyuki
Green Nanoelectronics Center (GNC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
Mori Takahiro
Green Nanoelectronics Center (GNC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
Mizubayashi Wataru
Green Nanoelectronics Center (GNC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
Yasuda Tetsuji
Green Nanoelectronics Center (GNC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
Maeda Tatsuro
Green Nanoelectronics Center (GNC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
Liu Yongxun
Green Nanoelectronics Center (GNC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
Sakamoto Kunihiro
Green Nanoelectronics Center (GNC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan

著作論文

Tunnel field-effect transistors with extremely low off-current using shadowing effect in drain implantation (Special issue: Microprocesses and nanotechnology)

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