p-Channel Tin Monoxide Thin Film Transistor Fabricated by Vacuum Thermal Evaporation

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概要

• 論文の詳細を見る

• By using tin monoxide films, p-channel oxide semiconductor thin film transistors were fabricated with a bottom-gate and bottom-contact structure. A p-type tin monoxide semiconductor thin film was obtained from tin monoxide powder by vacuum thermal evaporation. The as-deposited film showed an amorphous phase, and a polycrystalline tin monoxide was obtained by thermal annealing after the deposition. The hole concentration was on the order of $10^{17}$ cm-3, and the Hall mobility was 2.83 cm2 V-1 s-1. The resulting on-current/off-current ratio was more than $10^{2}$, and the field-effect mobility was approximately $4\times 10^{-5}$ cm2 V-1 s-1.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2010-02-25

著者

• Lee Ho-Nyeon

  Department of Electronics and Information Engineering, Soonchunhyang University, Asan 336-745, Korea

• Kim Hyung-Jung

  Department of Electronics and Information Engineering, Soonchunhyang University, Asan 336-745, Korea

• Kim Chang-Kyo

  Department of Electronics and Information Engineering, Soonchunhyang University, Asan 336-745, Korea

• Lee Ho-Nyeon

  Department of Display and Electronic Information Engineering, Soonchunhyang University, Asan, Chungnam 336-745, Korea

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