Gain improvement of enhancement-mode AlGaN/GaN high-electron-mobility transistors using dual-gate architecture (Special issue: Solid state devices and materials)

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Wang Ruonan

  Department Of Electronic And Computer Engineering Hong Kong University Of Science And Technology

関連論文

• Device Isolation by Plasma Treatment for Planar Integration of E/D-mode AlGaN/GaN HEMTs
• Gain Improvement of Enhancement-mode AlGaN/GaN HEMTs Using Dual-Gate Architectures
• Gain improvement of enhancement-mode AlGaN/GaN high-electron-mobility transistors using dual-gate architecture (Special issue: Solid state devices and materials)
• Device isolation by plasma treatment for planar integration of enhancement/depletion-mode AlGaN/GaN high electron mobility transistors (Special issue: Solid state devices and materials)

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